Home
Products
Manufacturers
About DiGi
Contact Us
Blogs & Posts
RFQ/Quote
Canada
Sign in
Selective Language
Current language of your choice:
Canada
Switch:
English
Europe
United Kingdom
France
Spain
Turkey
Moldova
Lithuania
Norway
Germany
Portugal
Slovakia
ltaly
Finland
Russian
Bulgaria
Denmark
Estonia
Poland
Ukraine
Slovenia
Czech
Greek
Croatia
Israel
Serbia
Belarus
Netherlands
Sweden
Montenegro
Basque
Iceland
Bosnia
Hungarian
Romania
Austria
Belgium
Ireland
Asia / Pacific
China
Vietnam
Indonesia
Thailand
Laos
Filipino
Malaysia
Korea
Japan
HongKong
TaiWan
Singapore
Pakistan
Saudi Arabia
Qatar
Kuwait
Cambodia
Myanmar
Africa,India and Middle East
United Arab Emirates
Tajikistan
Madagascar
India
Iran
DR Congo
South Africa
Egypt
Kenya
Tanzania
Ghana
Senegal
Morocco
Tunisia
South America / Oceania
New Zealand
Angola
Brazil
Mozambique
Peru
Colombia
Chile
Venezuela
Ecuador
Bolivia
Uruguay
Argentina
Paraguay
Australia
North America
United States
Haiti
Canada
Costa Rica
Mexico
About DiGi
About Us
About Us
Our Certifications
DiGi Introduction
Why DiGi
Policy
Quality Policy
Terms of use
RoHS Compliance
Return Process
Resources
Product Categories
Manufacturers
Blogs & Posts
Services
Quality Warranty
Payment Way
Global Shipment
Shipping Rates
FAQs
Manufacturer Product Number:
IPB12CNE8N G
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB12CNE8N G-DG
Description:
MOSFET N-CH 85V 67A D2PAK
Detailed Description:
N-Channel 85 V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Inventory:
RFQ Online
12800922
Request Quote
Quantity
Minimum 1
*
Company
*
Contact Name
*
Phone
*
E-mail
Delivery Address
Message
(
*
) is mandatory
We'll get back to you within 24 hours
SUBMIT
IPB12CNE8N G Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
OptiMOS™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
85 V
Current - Continuous Drain (Id) @ 25°C
67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
12.9mOhm @ 67A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4340 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB12C
Datasheet & Documents
Datasheets
IPB12CNE8N G
Additional Information
Other Names
SP000096451
IPB12CNE8NG
IPB12CNE8N G-DG
Standard Package
1,000
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STB80NF10T4
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
775
DiGi PART NUMBER
STB80NF10T4-DG
UNIT PRICE
1.46
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
PSMN017-80BS,118
MANUFACTURER
Nexperia USA Inc.
QUANTITY AVAILABLE
2313
DiGi PART NUMBER
PSMN017-80BS,118-DG
UNIT PRICE
0.56
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
PSMN012-80BS,118
MANUFACTURER
Nexperia USA Inc.
QUANTITY AVAILABLE
5050
DiGi PART NUMBER
PSMN012-80BS,118-DG
UNIT PRICE
0.67
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
BUK9616-75B,118
MANUFACTURER
Nexperia USA Inc.
QUANTITY AVAILABLE
6355
DiGi PART NUMBER
BUK9616-75B,118-DG
UNIT PRICE
0.65
SUBSTITUTE TYPE
MFR Recommended
PART NUMBER
STB120NF10T4
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
27142
DiGi PART NUMBER
STB120NF10T4-DG
UNIT PRICE
2.08
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
Related Products
BSS119L6327HTSA1
MOSFET N-CH 100V 170MA SOT23-3
IPB080N03LGATMA1
MOSFET N-CH 30V 50A D2PAK
IPD50N04S410ATMA1
MOSFET N-CH 40V 50A TO252-3-313
IPB65R190CFDATMA1
MOSFET N-CH 650V 17.5A D2PAK